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Ductile Cutting of Silicon Wafers:

1.   Mechanism of Ductile Cutting

Fig. 1.1 shows the schematic diagram of chip formation in ductile cutting of silicon wafer with a tool having a large negative rake angle and an arc cutting edge, where DE is the tool rake face, BD is the arc cutting edge, BC is the tool flank face, K is a point on the arc cutting edge BD, O is the center of the arc cutting edge BD, AB is a curved shear plane, r is the cutting edge radius, g is the tool rake angle, and ao is the depth of cut. The cutting forces in the cutting region are the resultant tool force Fr, the cutting force Fc, the thrust force Ft, the shear force on the shear plane, Fs, the normal force on shear plane, Fns, the frictional force on tool face, Ff, and the normal force on tool face, Fn.

 

Fig. 1.1  Schematic diagram of chip formation in ductile cutting of a brittle material.

 

In the cutting of brittle materials, with the undeformed chip thickness being sufficiently small and the ratio of the radius of tool cutting edge to undeformed chip thickness being larger than 1, the chip formation will be in a ductile mode. This is because the chip formation will be dominated by dislocation rather than fracture due to the following three effects. First, under the cutting geometry formed by extremely small undeformed chip thickness, and with the ratio of tool cutting edge radius to undeformed chip thickness being larger than 1, the workpiece material in the cutting region undertakes extremely large compressive stress and shear stress, with the compressive stress being much larger than the shear stress. This stress status produces a largely reduced stress intensity factor KI, and activates dislocation emission in the material. Second, at the mesoscale of chip formation, the dislocation hardening largely strengthens the normal flow stress of the workpiece material, which increases the fracture toughness of the material, KC. Third, at the mesoscale of chip formation, the strain gradient also largely strengthens the normal flow stress of the workpiece material, which also increases the fracture toughness of the material, KC. As a result, crack propagation due to workpiece material pre-existing flaws are blocked, and dislocations dominate the chip formation process. It should be noted that in the ductile chip formation mechanism of a brittle material the key issue is that the value of fracture toughness KC is larger than the value of stress intensity factor KI. This can be achieved by reducing the undeformed chip thickness in the cutting region. Since the KC is a material property that varies with the workpiece material, the value of undeformed chip thickness for ductile chip formation will also vary with the workpiece material.

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2.    Experimental Facilities

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Ultraprecision Lathe

Ultraprecision Cutting Setup

 

 

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Atomic Force Microscope

Scanning Electron Microscope

 

 

 

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Optical Measurement

Surface Profiler

 

 

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3.    Nanometric Cutting

Fig. 3.1 shows the schematic diagram of the maximum undeformed chip thickness in the ultra-precision face turning experiments. Here, O1 and O2 are the centers of two adjacent arc cutting edges, and the distance between O1 and O2 is the feed rate used in the experiments. The nanometer scale values for undeformed chip thickness were achieved by arranging combinations of the radius of tool corner R, depth of cut ao and feed rate f, as shown in Fig. 3.1. The maximum undeformed chip thickness dmax can be simplified using the equation when  as shown in Fig. 3.1 (a):

 

                                                                                                                              (3.1)

 

The maximum undeformed chip thickness dmax can be determined using the equation when  as shown in Fig. 3.1 (b):

 

                                                                                 (3.2)

 

(a)                                           (b) 

Fig. 3.1  Schematic diagrams of maximum undeformed chip thickness.

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4.    Chip Formation

SEM micrographs of chips obtained in cutting of silicon wafers using the diamond tool with the cutting edge radius of 45 nm under cutting speed of 4 m/s (1000 rpm) and feed rate of 5 mm/rev (5 mm/min) are shown in Fig. 4.1. It was found that when the undeformed chip thickness was smaller than 40 nm, the chips obtained were in the form of ribbons and layers, i.e. the chips formed were continuous. The appearance of such chips was similar to the chip generated when machining ductile metals. On the other hand, as the undeformed chip thickness increased beyond 40 nm, discontinuous and fractured chips were obtained. Hence, the cutting at the undeformed chip thickness larger than 40 nm indicated that the chip formation was in a brittle mode.

(a)  Undeformed chip thickness: 20 nm

(b)  Undeformed chip thickness: 50 nm

Fig. 4.1  Chips formed at different undeformed chip thickness in cutting of Si-wafers.

 

Cutting of silicon wafers was made using the diamond tool with the cutting edge radius of 647 nm under cutting speed of 4 m/s (1000 rpm) and feed rate of 5 mm/rev (5 mm/min). SEM micrographs of chips obtained are shown in Fig. 4.2. The micrographs show that the chips formed in cutting with values of the undeformed chip thickness in between 50 nm to 596 nm were in the form of long ribbon, which is similar to the chip generated in machining of ductile metals as shown in Fig. 4.2 (a). The chips are continuous with fine ripples on the surfaces, indicating that the chip formation was in a ductile mode. On the other hand, the chips in cutting with values of the undeformed chip thickness larger than 655 nm were fragmented and discontinuous with non-uniform length as shown in Fig. 4.2 (b). These chips are fractured particles and blocks with sharp ends. Such appearance indicates that in the cutting process, the chip formation was dominated by crack propagation and brittle fracture.

 

(a)  Undeformed chip thickness: 200 nm

(b)  Undeformed chip thickness: 690 nm

Fig. 4.2  Chips formed at different undeformed chip thickness in cutting of Si-wafers.

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5.    Ductile Cutting Surface

SEM photographs of the machined workpiece surfaces achieved in cutting of silicon wafers with the cutting edge radius of 335 nm under cutting speed of 4 m/s (1000 rpm) and feed rate of 5 mm/rev (5 mm/min) are shown in Fig. 5.1. SEM observations on the machined wafer surfaces indicated that larger undeformed chip thickness would cause more percentage of fracture surfaces. It should be noted that feed marks were clearly displayed on the machined workpiece surfaces in cutting of silicon wafers. Fracture surfaces were achieved in the pre-trimming of silicon wafers due to cutting in a brittle mode. Maybe some of them were left and remained in cutting of silicon wafers with smaller undeformed chip thickness.

 

(a)  Undeformed chip thickness: 242 nm (b)  Undeformed chip thickness: 337 nm
Fig. 5.1   SEM photographs of the machined workpiece surfaces of Si-wafers.

 

The machined workpiece surface of a silicon wafer achieved in ductile mode with the cutting edge radius of 335 nm under cutting speed of 4 m/s (1000 rpm) and feed rate of 5 mm/rev (5 mm/min) was examined using an optical inspection measurement system (OIMS), as well as the original polished surface of a silicon wafer. The OIMS photos are shown in Fig. 5.2. Compared the machined wafer surface with the polished wafer surface, a good workpiece surface for silicon wafers can be achieved by using the ductile cutting technology, as shown in Fig. 5.2.

 

(a)  Ductile cutting surface

(b)  Original polished Surface

Fig. 5.2  OIMS photos of ductile cutting and original polished surfaces of Si-wafers.

 

AFM photographs of the machined surfaces achieved in cutting of silicon wafers with the cutting edge radius of 335 nm under cutting speed of 4 m/s (1000 rpm) and feed rate of 5 mm/rev (5 mm/min) are shown in Fig. 5.3. AFM observations of the surface topography indicated that smoother surfaces were obtained in cutting of silicon wafers with smaller undeformed chip thickness. The larger the undeformed chip thickness, the rougher the machined workpiece surfaces, and the larger the machined workpiece surface roughness. Experimental results achieved in cutting of silicon wafers indicated that the cutting modes changed from ductile to brittle when the undeformed chip thickness increased within an extremely small range, whatever from the SEM observations of chip formation, and the AFM and SEM examinations of the machined workpiece surfaces. All the experimental results indicated that silicon wafers could be machined in a ductile cutting mode with certain cutting conditions and certain cutting tool geometry.

 

(a)  Undeformed chip thickness: 166 nm (a)  Undeformed chip thickness: 348 nm
Fig. 5.3   AFM photographs of the machined workpiece surfaces of Si-wafers.

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Last updated: 01/22/07.